Semiconductor structure and method for forming the same

ABSTRACT

A semiconductor structure is provided in the present invention, including a substrate having a device region and an alignment mark region defined thereon, a dielectric layer disposed on the substrate, a conductive via formed in the dielectric layer on the device region, a first trench formed in the dielectric layer on the alignment mark, a plurality of second trenches formed in the dielectric layer directly under the first trench and exposed from a bottom surface of the first trench, and a memory stacked structure disposed on the dielectric layer, directly covering a top surface of the conductive via and filling into the first trench and the second trench.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of U.S. application Ser. No.16/541,172 filed at Aug. 15, 2019, which is included in its entiretyherein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention generally relates to a semiconductor structure andmethod for forming the same. More particularly, the present inventionrelates to a magnetoresistive random access memory (MRAM) and method forforming the same.

2. Description of the Prior Art

A magnetoresistive random access memory (MRAM) is a kind of non-volatilememory that has drawn a lot of attention in this technology fieldrecently regarding its potentials of incorporating advantages of otherkinds of memories. For example, an MRAM device may have an operationspeed comparable to SRAMs, the non-volatile feature and low powerconsumption comparable to flash, the high integrity and durabilitycomparable to DRAM. More important, the process for forming an MRAMdevice may be conveniently incorporated into existing semiconductormanufacturing processes.

A typical MRAM cell structure usually comprises a memory stack structurecalled magnetic tunnel junction (MTJ) disposed between the lower andupper interconnecting structures. Unlike conventional memories thatstore data by electric charge or current flow, an MRAM cell stores databy applying external magnetic fields to control the magnetic polarityand tunneling magnetoresistance (TMR) of the MTJ.

However, the manufacturing of MRAM devices is still confronted withchallenges. For example, as the cell size of the MRAM becomes smaller toachieve higher density, the alignment accuracy between the MTJ and theinterconnecting structures has been more and more critical. Inlinemisalignment would cause an insufficient contacting area between thebottom electrode of the MTJ and the underlying interconnectingstructure, which may result in high series resistance that may obstructthe MRAM to function properly. Therefore, there is still a need in thefield to provide a novel MRAM device and method for forming the samethat may ensure the alignment accuracy between the MTJ and theinterconnecting structures to prevent the aforesaid problems.

SUMMARY OF THE INVENTION

In light of the above, the present invention is directed to provide asemiconductor structure and method for forming the same which mayimprove the alignment accuracy between the memory cell structure and theunderlying interconnecting structure.

One objective of the present invention is to provide a semiconductorstructure, which includes a substrate having a device region and analignment mark region, a dielectric layer disposed on the substrate, aconductive via formed in the dielectric layer on the device region, afirst trench formed in the dielectric layer on the alignment markregion, a plurality of second trenches formed in the dielectric layerunder the first trench and exposed from a bottom surface of the firsttrench, and a memory stack structure disposed on the dielectric layer,directly covering a top surface of the conductive via and filling intothe first trench and the second trenches.

Another objective of the present invention is to provide a method forforming a semiconductor structure, including the steps of providing asubstrate having a device region and an alignment mark region, forming afirst dielectric layer on the substrate and a second dielectric layer onthe first dielectric layer, forming a conductive via in the seconddielectric layer on the device region, forming a mask layer on thesecond dielectric layer, the mask layer having an opening exposing thesecond dielectric layer on the alignment mark region, performing a dryetching process through the opening to form a first trench and aplurality of second trenches directly under the first trench, whereinthe first trench penetrates through the second dielectric layer and anupper portion of the first dielectric layer, the second trenches arecompletely in the first dielectric layer and exposed from a bottomsurface of the first trench, removing the mask layer, and forming amemory stack structure on the second dielectric layer, wherein thememory stack structure completely covers a top surface of the conductivevia and filling into the first trench and the second trenches.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 to FIG. 14 are schematic diagrams illustrating the steps offorming a semiconductor structure according to one embodiment of thepresent invention.

FIG. 15 to FIG. 16 are schematic diagrams illustrating a modification ofthe embodiment illustrated in FIG. 1 to FIG. 14.

DETAILED DESCRIPTION

To provide a better understanding of the present invention to those ofordinary skill in the art, several exemplary embodiments of the presentinvention will be detailed as follows, with reference to theaccompanying drawings using numbered elements to elaborate the contentsand effects to be achieved. The accompanying drawings are included toprovide a further understanding of the embodiments, and are incorporatedin and constitute a part of this specification. These embodiments aredescribed in sufficient detail to enable those skilled in the art topractice the invention. Other embodiments may be utilized and thatstructural, logical and electrical changes may be made without departingfrom the spirit and scope of the present invention.

FIG. 1 to FIG. 14 are schematic diagrams illustrating the steps offorming a semiconductor structure according to one embodiment of thepresent invention. FIG. 1, FIG. 5, FIG. 11 and FIG. 12 are schematic topviews of the semiconductor structure in a plane containing the X-axisand Y-axis. FIG. 2, FIG. 3, FIG. 4, FIG. 6 to FIG. 10, FIG. 13 and FIG.14 are schematic cross-sectional views of the semiconductor structure ina plane containing the X-axis and Z-axis. The directions of the X-axisand the Y-axis are different, and the Z-axis is perpendicular to theplane containing the X-axis and Y-axis. In an embodiment, the X-axis andthe Y-axis are perpendicular. The semiconductor structure, for example,may be a magnetoresistive random access memory (MRAM).

Please refer to FIG. 1 and FIG. 2. As shown in FIG. 1, a substrate 10having a device region 14 and an alignment mark region 16 definedthereon is provided. The substrate 10 may be a silicon substrate, asilicon-on-insulator (SOI) substrate, or Group III-V semiconductorsubstrate, but not limited thereto. An upper surface 10 a of thesubstrate 10 is oriented in a plane containing the X-axis and Y-axis.The substrate 10 may comprise semiconductor structures formed therein,such as active devices such as metal-oxide semiconductor (MOS)transistors, passive devices, conductive layers and dielectric layerssuch as interlayer dielectric layers, which are not shown in thediagrams for the sake of simplification. As shown in FIG. 2, a firstdielectric layer 100 is formed on the upper surface 10 a of thesubstrate 10. The first dielectric layer 100 has a planarized uppersurface 100 a and completely covers the device region 14 and thealignment mark region 16 of the substrate 10. The first dielectric layer100 may comprise dielectric materials such as silicon oxide or low-kdielectric materials such as fluorinated silica glass (FSG), siliconoxycarbide (SiCOH), spin on glass, porous low-k dielectric material,organic dielectric polymers, or a combination thereof, but not limitedthereto. An etching stop layer (not shown) may be disposed between thesubstrate 10 and the first dielectric layer 100.

Please still refer to FIG. 2. A plurality of interconnecting structures102 are formed in the first dielectric layer 100 on the device region 14of the substrate 10. The interconnecting structures 102 may comprisemetal such as tungsten (W), copper (Cu), aluminum (Al), or othersuitable metals, but not limited thereto. According to an embodiment,the interconnecting structures 102 may comprise copper and may be formedby single-damascene or dual-damascene metallization processes. Theinterconnecting structures 102 may respectively have a lower portion 102a for electrically connecting to an underlying conductive layer in thesubstrate 10 and an upper portion 102 b disposed on the lower portion102 a for electrically connecting to an overlying interconnectingstructure subsequently formed. A barrier layer (not shown) may bedisposed between the interconnecting structures 102 and the firstdielectric layer 100. The barrier layer may comprise titanium (Ti),tantalum (Ta), titanium nitride (TiN), tantalum nitride (TaN), or acombination thereof, but not limited thereto. It should be noticed thatthe first dielectric layer 100 on the alignment mark region 16 of thesubstrate 10 does not have interconnecting structures 102 formedtherein.

Please refer to FIG. 3. Subsequently, a second dielectric layer 200 isformed on the upper surface 100 a of the first dielectric layer 100 andcompletely covers the device region 14 and the alignment mark region 16.The second dielectric layer 200 may include multiple layers. Forexample, the second dielectric layer 200 may include an etching stoplayer 202 and a dielectric material layer 204 disposed on the etchingstop layer 202. The etching stop layer 202 may include dielectricmaterials such as silicon nitride (SiN), silicon carbon nitride (SiCN)or silicon oxynitride (SiON), or a combination thereof, but not limitedthereto. The dielectric material layer 204 may include dielectricmaterials such as silicon oxide or low-k dielectric materials such asfluorinated silica glass (FSG), silicon oxycarbide (SiCOH), spin onglass, porous low-k dielectric material, organic dielectric polymers, ora combination thereof, but not limited thereto. According to theembodiment, the first dielectric layer 100 and the second dielectriclayer 200 comprise different dielectric materials. For example, thefirst dielectric layer 100 may comprise low-k dielectric materials; theetching stop layer 202 of the second dielectric layer 200 may compriseSiCN, and the dielectric material layer 204 may comprise silicon oxide.

Please refer to FIG. 4 and FIG. 5. Subsequently, a patterning process P1such as a photolithography-etching process is performed tosimultaneously define a plurality of via holes 206 in the seconddielectric layer 200 on the device region 14 and a plurality of openingssuch as trenches 207 in the second dielectric layer 200 on the alignmentmark region 16. The via holes 206 are aligned to the interconnectingstructures 102, respectively, and extend downwardly through the seconddielectric layer 200 to expose top surfaces of the interconnectingstructures 102. The trenches 207 extend downwardly through the seconddielectric layer 200 and expose the upper surface 100 a of the firstdielectric layer 100. In some embodiments, the trenches 207 may extendfurther into an upper portion of the first dielectric layer 100 and mayhave bottom surfaces lower than the upper surface 100 a of the firstdielectric layer 100. As shown in FIG. 4, the via holes 206 may have asame width W1, and the trenches 207 may have a same width W2. It shouldbe noted that the width W1 and the width W2 shown in FIG. 4 are notdrawn to scale for illustrative purposes. According to an embodiment,the width W2 is multiple times larger than the width W1. For example,the width W1 of the via holes 206 is between 15 nm to 25 nm, and thewidth W2 of the trenches 207 is between 200 to 400 nm.

Please refer to FIG. 5. It is noteworthy that the trenches 207 arearranged to according to a designed pattern of an alignment mark featureused in a subsequent patterning process P3 (shown in FIG. 14). Forexample, as shown in FIG. 5, the trenches 207 are arranged approximatelyin a rectangle region of the second dielectric layer 200 and are dividedinto groups 207 a, 207 b, 207 c and 207 d. The groups 207 a and 207 bare positioned at two opposite corners of the rectangle region and thetrenches 207 of the groups 207 a and 207 b extend lengthwisely alongdirection of the X-axis and are arranged in parallel along direction ofthe Y-axis. On the other hand, the groups 207 c and 207 d are positionedat the other two opposite corners of the rectangle region and thetrenches 207 of the groups 207 c and 207 d extend lengthwisely alongdirection of the Y-axis and are arranged in parallel along direction ofthe X-axis. According to an embodiment, all of the trenches 207 comprisea same width W2 and a same length. In other embodiments, the trenches207 of different groups may have different widths or lengths. Thetrenches 207 shown in the left portion of FIG. 4 may be threesuccessively arranged trenches 207 of the group 207 c shown in FIG. 5,for example.

Please refer to FIG. 6. Subsequently, a barrier layer 210 is formed onthe second dielectric layer 200. The barrier layer 210 conformallycovers the upper surface of the second dielectric layer 200, the bottomsurfaces and sidewalls of the via holes 206 and the trenches 207. Aconductive material 212 is then deposited on the barrier layer 210 andcompletely fills the via holes 206. According to an embodiment, thebarrier layer 210 may comprise single layer or multiple layers formed byatomic layer deposition (ALD) process. The material of the barrier layer210 may comprise titanium (Ti), tantalum (Ta), titanium nitride (TiN),tantalum nitride (TaN), or a combination thereof, but not limitedthereto. The conductive material 212 may be formed by chemical vapordeposition (CVD) process, physical vapor deposition (PVD) process orelectroplating process and may comprise metal such as tungsten (W),copper (Cu), or aluminum (Al), but not limited thereto. It should benoticed that due to the larger width of the trenches 207, the thicknessof the conductive material 212 is able to completely fill the via holes206 but without filling up the trenches 207. According to an embodimentwhen the width W1 of the via holes 206 is between 15 nm to 25 nm, thethickness of the conductive material 212 is between 500 Å to 700 Å, butnot limited thereto. The sidewalls and bottom surfaces of the trenches207 are covered by the barrier layer 210 and the conductive material212.

Please refer to FIG. 7. Afterward, a chemical mechanical polishing (CMP)process P2 is performed to planarize the conductive material 212 andremove unnecessary conductive material 212 and barrier layer 210 outsidethe via holes 206 and the trenches 207 until exposing a surface of thesecond dielectric layer 200. The conductive material 212 and barrierlayer 210 remained in the via holes 206 form the conductive vias 208,which are used to provide electrical interconnection between thesubsequently formed memory cell structures 330 and the interconnectingstructures 102. After the chemical mechanical polishing process P2, thesidewalls and bottom surfaces of the trenches 207 are stilled covered bythe barrier layer 210 and the conductive material 212.

Please refer to FIG. 8. Next, a mask layer 220 such as a patternedphotoresist layer or a patterned hard mask layer is formed on the seconddielectric layer 200. An opening 222 is formed in the mask layer 220 onthe alignment mark region 16 to expose the trenches 207 and a portion ofthe second dielectric layer 200 nearby the trenches 207. The conductivevias 208 and the second dielectric layer 200 on the device region 14 arecompletely covered by the mask layer 220 and not exposed.

Please refer to FIG. 9. After forming the mask layer 220, optionally, awet etching process E1 may be performed to remove the barrier layer 210and the conductive material 212 in the trenches 207.

Please refer to FIG. 10, FIG. 11 and FIG. 12. Subsequently, a dryetching process E2 is performed using the mask layer 220 as an etchingmask to etch away the second dielectric layer 200 and the firstdielectric layer 100 exposed from the opening 222 so as to transfer thepattern of the opening 222 downwardly into the second dielectric layer200 and the first dielectric layer 100 to form a first trench 224penetrating through the whole thickness of the second dielectric layer200 and an upper portion of the first dielectric layer 100. According toan embodiment, the dry etching process E2 may be an ion beam etching(IBE) process or a reactive ion etching (ME) process, but not limitedthereto. It is noteworthy that during the dry etching process E2, theportion of the second dielectric layer 200 exposed from the opening 222acts as an etching buffer layer for the underneath first dielectriclayer 100 during the dry etching process E2. As a result, the removedthickness of the first dielectric layer 100 covered by the seconddielectric layer 200 is smaller than the removed thickness of the firstdielectric layer 100 exposed from the first trenches 207. Accordingly,the patterns of the trenches 207 are transferred downwardly into thefirst dielectric layer 100 to form a plurality of second trenches 226directly under the first trench 224.

As shown in FIG. 10, a bottom surface 224 a of the first trench 224exposes the first dielectric layer 100 and is lower than a bottom of theconductive vias 208. According to an embodiment, the bottom surface 224a of the first trench 224 is approximately at a same horizontal levelwith respect to a bottom of the upper portion 102 b of theinterconnecting structure 102 in the device region 14. The secondtrenches 226 are formed in the first dielectric layer 110 directly underthe first trench 224 and are exposed from the bottom surface 224 a ofthe first trench 224. The bottoms of the second trenches 226 expose thefirst dielectric layer 100 without exposing any portion of the substrate10. In other words, the second trenches 226 are completely formed in andsurrounded by the first dielectric layer 110 and the overall depth ofthe first trench 224 and the second trenches 226 do not penetratethrough the first dielectric layer 110.

After the dry etching process E2, the mask layer 220 is completelyremoved and the top surface of the interconnecting structures 102 andthe second dielectric layer 200 on the device region 400 are exposed.

Please refer to FIG. 11 and FIG. 12. Because the patterns of the secondtrenches 226 are defined by the trenches 207, the arrangement of thesecond trenches 226 are the same as the arrangement of the trenches 207as shown in FIG. 5. Specifically, the second trenches 226 are dividedinto groups 226 a, 226 b, 226 c and 226 d. The second trenches 226 ofthe groups 226 a and 226 b extend lengthwisely along direction of theX-axis and are arranged in parallel along direction of the Y-axis. Onthe other hand, the second trenches 226 of the groups 226 c and 226 dextend lengthwisely along direction of the Y-axis and are arranged inparallel along direction of the X-axis. As previously mentioned, thetrenches 207 are arranged according to a designed pattern of analignment mark feature. Therefore, the second trenches 226 defined bythe trenches 207 would form an alignment feature AM. In the embodimentas shown in FIG. 11, the groups 226 a, 226 b, 226 c and 226 d areexposed from the bottom surface 224 a of same first trench 224. That is,the groups 226 a, 226 b, 226 c and 226 d are formed directly under thebottom surface 224 a of a same first trench 224. However, in anotherembodiment as shown in FIG. 12, the groups 226 a, 226 b, 226 c and 226 dmay be respectively exposed from the bottom surfaces 224 a of differentfirst trenches 224. That is, the mask layer 220 on the alignment markregion 16, as shown in FIG. 8 and FIG. 9, may have plural openings 222respectively exposing one of the groups 207 a, 207 b, 207 c, 207 d ofthe trenches 207 and plural first trenches 224 may be formed byperforming the dry etching process E2 through the openings 222 to etchthe second dielectric layer 200 and the first dielectric layer 100.

Please refer to FIG. 13. Subsequently, a memory stack structure 300 isformed on the second dielectric layer 200, completely covers the deviceregion 14 and the alignment mark region 16 and fills into the firsttrench 226 and the second trenches 226. The memory stack structure 300may comprise a magnetoresistive random access memory (MRAM) structureincluding, from bottom to top, a bottom electrode layer 302, a pinninglayer 306, a pinned layer 308, a tunneling layer 310, a free layer 312,a cap layer 314 and a top electrode layer 316 are successively formed onthe interlayer dielectric layer 200. According to an embodiment, thebottom electrode layer 302 and the top electrode layer 316 may comprisea same or different conductive material such as titanium, tantalum,titanium nitride, tantalum nitride or a combination thereof, but notlimited thereto. The cap layer 314 may comprise a metal or a metal oxidesuch as aluminum (Al), magnesium (Mg), tantalum (Ta), ruthenium (Ru),tungsten dioxide (WO2), NiO, MgO, Al2O3, Ta2O5, MoO2, TiO2, GdO, or MnO,or a combination thereof, but not limited thereto. The pinning layer 306is disposed on the bottom electrode layer 302 and may compriseanti-ferromagnetic (AFM) material such as PtMn, IrMn, Ptlr or the like.The pinned layer 308 and the free layer 312 respectively comprise a sameor different ferromagnetic material such as Fe, Co, Ni, FeNi, FeCo,CoNi, FeB, FePt, FePd, CoFeB, or the like. The magnetic polarity of thepinned layer 308 is pinned (anti-ferromagnetic coupled) to a fixedorientation by the pinning layer 306 thereunder. The magnetic polarityof the free layer 312 may be changed by an external magnetic field. Thetunneling layer 310 is sandwiched between the pinned layer 308 and thefree layer 312 and may comprise insulating material such as MgO, Al2O3,NiO, GdO, Ta2O5, MoO2, TiO2, WO2, or the like. The pinning layer 306,the pinned layer 308, the tunneling layer 310 and the free layer 312together form a magnetic tunneling junction (MTJ) material layer 304between the top electrode layer 316 and the bottom electrode layer 302and may respectively comprise single or multiple layers having athickness ranges from several angstroms to dozens of nanometers.

As shown in FIG. 13, the memory stack structure 300 on the alignmentmark region 16 completely fills the second trenches 226 but does notfill up the first trench 224. The memory stack structure 300 mayreproduce the topography of the bottom surface 224 a of the first trench224, the sidewalls and the bottom surfaces 226 a of the second trenches226 and has a battlement cross-sectional profile. In other words, a topsurface of the memory stack structure 300 on the alignment mark region16 may still show the pattern of the alignment feature AM.

Please refer to FIG. 14. Thereafter, a patterning process P3 isperformed to pattern the memory stack structure 300 to form the memorycell structures 330 on the device region 14. According to an embodiment,the patterning process P3 may comprise the following steps. First, ahard mask layer (not shown) may be formed on the top electrode layer316. A photolithography-etching process, for example, is then performedto pattern the hard mask layer and define the patterned of the memorycell structures 330 in the hard mask layer. Subsequently, an etchingprocess such as a reactive ion etching process is performed using thepatterned hard mask as an etching mask to etch and pattern the topelectrode layer 316 and the cap layer 314. Another etching process suchas an ion beam etching process is carried out using the patterned topelectrode layer 316 as an etching mask to etch the underneath magnetictunneling junction material layer 304 and bottom electrode layer 302 soas to obtain the memory cell structures 330.

The memory cell structures 330 are disposed directly on the conductingvias 208, respectively. The alignment accuracy between the memory cellstructures 330 and the conducting vias 208 is critical for therobustness of the electrical interconnection therebetween. The alignmentaccuracy between the memory cell structures 330 and the conducting vias208 is determined by the photolithography-etching process of thepatterning process P3 for patterning the hard mask layer. A misalignedmemory cell structure 330 may have insufficient contacting area betweenthe bottom electrode layer 302 of the memory cell structure 330 and theconducting via 208, which may result in increased serial resistance andcause failure of the magnetoresistive random access memory. One featureof the present invention is that the patterning process P3 is aligned tothe alignment mark feature AM comprising the second trenches 226,wherein the patterns of the second trenches 226 are transferred from thepatterns of the trenches 207. It is noteworthy that since the trenches207 and the via holes 206 are defined at the same time by the samepatterning process P1 and may have substantially the same alignmentoffset, the second trenches 226 may also have an alignment offsetsubstantially the same as the via holes 206. Therefore, by aligning tothe alignment mark feature AM during the patterning process P3, theobtained memory cell structures 330 may also have an alignment offsetsubstantially the same as the via holes 206 (the conducting vias 208).In this way, the alignment accuracy between the memory cell structures330 and the conducting vias 208 may be improved and robust electricalconnections therebetween may be achieved.

Please refer to FIG. 15 and FIG. 16, which are schematic diagramsillustrating a modification of the embodiment shown in FIG. 1 to FIG.14. The process from FIG. 15 to FIG. 16 corresponds to the process fromFIG. 4 to FIG. 7. As shown in FIG. 15, after forming the seconddielectric layer 200, the patterning process P1 is performed to definethe via holes 206 in the second dielectric layer 200 on the deviceregion 200. The second dielectric layer 200 on the alignment mark region16 is not patterned, remains intact and completely covers the firstdielectric layer 100 after the patterning process P1. As shown in FIG.16, after the chemical mechanical polishing process P2 and forming theconductive vias 208 in the via holes 206, another patterning processP1-1 such as a photolithography-etching process is performed to definethe trenches 207 in the second dielectric layer 200 on the alignmentmark region 16. Afterward, the mask layer 220 having the opening 222 (asshown in FIG. 8) may be formed on the second dielectric layer 200 andthe dry etching process E2 (as shown in FIG. 10) may be performed toetch the second dielectric layer 200 and the first dielectric layer 100through the opening 222. In the modification, the wet etching E1 (asshown in FIG. 9) may be omitted because that the trenches 207 are formedafter forming the conductive vias 208 and would not be filled with anyconductive material 212 or barrier layer 210.

Overall, the method for forming a magnetoresistive random access memoryprovided by the present invention includes forming the alignment markfeature AM in the first dielectric layer 100 below the second dielectriclayer 200 having the conductive vias 208 formed therein by performing ananisotropic dry etching process E2 after forming the conductive vias 208and before depositing the memory stack structure 300 to transfer thepattern of the trenches 207 from the second dielectric layer 200downwardly into the underlying first dielectric layer 100 so as to formthe second trenches 226 of the alignment mark feature AM. The alignmentmark feature AM is then utilized to pattern the memory stack structure300 into the memory cell structures 330 to obtain a better alignmentaccuracy of the memory stack structure 300 and the conductive vias 208.The quality of the electrical interconnections between the memory stackstructure 300 and the conductive vias 208 may be improved.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A semiconductor structure, comprising: asubstrate having a device region and an alignment mark region; adielectric layer disposed on the substrate; a conductive via formed inthe dielectric layer on the device region; a first trench formed in thedielectric layer on the alignment mark region; a plurality of secondtrenches formed in the dielectric layer under the first trench andexposed from a bottom surface of the first trench; and a memory stackstructure disposed on the dielectric layer, directly covering a topsurface of the conductive via and filling into the first trench and theplurality of second trenches.
 2. The semiconductor structure accordingto claim 1, wherein the memory stack structure comprises amagnetoresistive random access memory (MRAM) structure, and the MRAMcomprises: a bottom electrode layer; a magnetic tunneling junction (MTJ)layer; a cap layer; and a top electrode layer.
 3. The semiconductorstructure according to claim 1, wherein the second trenches form analignment mark feature, wherein the memory stack structure is patternedby a patterning process aligned to the alignment mark feature.
 4. Thesemiconductor structure according to claim 1, wherein the dielectriclayer is not penetrated by the first trench and the second trenches. 5.The semiconductor structure according to claim 1, wherein the bottomsurface of the first trench is lower than a bottom surface of theconductive via.
 6. The semiconductor structure according to claim 1,wherein the second trenches have a same dimension.
 7. The semiconductorstructure according to claim 1, wherein some of the second trenchesextend along a first direction and arranged in parallel along a seconddirection, the other second trenches extend along the first directionand arranged in parallel along the second direction, wherein the firstdirection and the second direction are different.
 8. The semiconductorstructure according to claim 1, wherein the dielectric layer comprises afirst dielectric layer and a second dielectric layer disposed on thefirst dielectric layer, wherein the first trench penetrates through thewhole thickness of the second dielectric layer and an upper portion ofthe thickness of the first dielectric layer, the second trenches areformed completely in the first dielectric layer directly under the firsttrench.
 9. The semiconductor structure according to claim 8, furthercomprising an interconnecting structure formed in the first dielectriclayer on the device region, wherein the conductive via is in the seconddielectric layer vertically over the interconnecting structure anddirectly contacts the interconnecting structure.
 10. The semiconductorstructure according to claim 8, wherein the first dielectric layer andthe second dielectric layer comprise different dielectric materials.